IPB60R160P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Number of Terminations :

2

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

23.8A Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

176W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2080pF @ 100V

Lead Free :

Contains Lead

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

600V

Rds On (Max) @ Id, Vgs :

160m Ω @ 9A, 10V

Vgs(th) (Max) @ Id :

4.5V @ 750μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

68A

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Pbfree Code :

yes

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Series :

CoolMOS™ P6

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2008

Number of Elements :

1

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

23.8A

Terminal Position :

Single

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

497 mJ

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.16Ohm

ECCN Code :

EAR99