IPB60R125CPATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

208W Tc

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

ECCN Code :

EAR99

Pbfree Code :

No

Number of Terminations :

2

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 1.1mA

Pulsed Drain Current-Max (IDM) :

82A

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Avalanche Energy Rating (Eas) :

708 mJ

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 100V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

600V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.125Ohm

Series :

CoolMOS™

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Terminal Form :

Gull wing

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2007

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

125m Ω @ 16A, 10V

Drain Current-Max (Abs) (ID) :

25A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED