IPB60R120P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

78A

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Height :

4.7mm

Number of Terminations :

2

Transistor Element Material :

SILICON

Power Dissipation-Max :

95W Tc

Turn On Delay Time :

21 ns

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

26A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 410μA

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

650V

Published :

2014

Input Capacitance (Ciss) (Max) @ Vds :

1544pF @ 400V

Drain to Source Breakdown Voltage :

600V

Reach Compliance Code :

not_compliant

Max Junction Temperature (Tj) :

150°C

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

81 ns

Surface Mount :

yes

Factory Lead Time :

18 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Power Dissipation :

95W

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

82 mJ

Rds On (Max) @ Id, Vgs :

120m Ω @ 8.2A, 10V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Series :

CoolMOS™ P7

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V