IPB60R120C7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Number of Elements :

1

Power Dissipation-Max :

92W Tc

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

19A

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 400V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

650V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

600V

ECCN Code :

EAR99

Published :

2014

JEDEC-95 Code :

TO-263AB

Terminal Finish :

Tin (Sn)

Series :

CoolMOS™ C7

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

18 Weeks

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 390μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Rds On (Max) @ Id, Vgs :

120m Ω @ 7.8A, 10V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.12Ohm

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Avalanche Energy Rating (Eas) :

78 mJ

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

66A