IPA80R650CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Published :

2008

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

8A

Vgs(th) (Max) @ Id :

3.9V @ 470μA

Continuous Drain Current (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Series :

CoolMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

800V

Power Dissipation-Max :

33W Tc

Drain-source On Resistance-Max :

0.65Ohm

Packaging :

Tube

Operating Temperature :

-40°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

650m Ω @ 5.1A, 10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

340 mJ

Pulsed Drain Current-Max (IDM) :

24A

Transistor Application :

SWITCHING

Lead Free :

Lead Free

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Halogen Free :

Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Terminal Position :

Single

Number of Terminations :

3

Factory Lead Time :

18 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)