IPA80R460CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

DS Breakdown Voltage-Min :

800V

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

460m Ω @ 7.1A, 10V

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

470 mJ

Lead Free :

Lead Free

Continuous Drain Current (ID) :

5A

Turn-Off Delay Time :

72 ns

Transistor Application :

SWITCHING

Number of Pins :

3

Pbfree Code :

yes

FET Type :

N-Channel

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

34W Tc

Operating Temperature :

-40°C~150°C TJ

Rise Time :

15ns

Turn On Delay Time :

25 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 100V

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

800V

Published :

2015

Vgs(th) (Max) @ Id :

3.9V @ 680μA

Drain-source On Resistance-Max :

0.46Ohm

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

10.8A

Series :

CoolMOS™ CE

Number of Terminations :

3

Transistor Element Material :

SILICON

Mount :

Through Hole