IPA80R460CEXKSA1
- Mfr.Part #
- IPA80R460CEXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 5A TO220
- Stock
- 15,379
- In Stock :
- 15,379
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Operating Temperature :
- -40°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 100V
- Pbfree Code :
- yes
- Series :
- CoolMOS™ CE
- Rise Time :
- 15ns
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.46Ohm
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 10.8A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 10 ns
- Package / Case :
- TO-220-3 Full Pack
- Terminal Position :
- Single
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 3.9V @ 680μA
- Avalanche Energy Rating (Eas) :
- 470 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Rds On (Max) @ Id, Vgs :
- 460m Ω @ 7.1A, 10V
- Power Dissipation-Max :
- 34W Tc
- Continuous Drain Current (ID) :
- 5A
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 800V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2015
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Turn On Delay Time :
- 25 ns
- Turn-Off Delay Time :
- 72 ns
- Case Connection :
- Isolated
- DS Breakdown Voltage-Min :
- 800V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IPA80R460CEXKSA1

N-Channel Tube 460m Ω @ 7.1A, 10V ±20V 1600pF @ 100V 64nC @ 10V 800V TO-220-3 Full Pack
IPA80R460CEXKSA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 470 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1600pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5A amps.A device can conduct a maximum continuous current of [10.8A] according to its drain current.It is [72 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 800V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPA80R460CEXKSA1 Features
the avalanche energy rating (Eas) is 470 mJ
a continuous drain current (ID) of 5A
the turn-off delay time is 72 ns
a 800V drain to source voltage (Vdss)
IPA80R460CEXKSA1 Applications
There are a lot of Infineon Technologies
IPA80R460CEXKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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