IPA80R1K4CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

JESD-609 Code :

e3

Halogen Free :

Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

12A

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Published :

2008

ECCN Code :

EAR99

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Continuous Drain Current (ID) :

3.9A

Vgs (Max) :

±20V

Factory Lead Time :

18 Weeks

Max Dual Supply Voltage :

800V

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Transistor Application :

SWITCHING

Series :

CoolMOS™

Avalanche Energy Rating (Eas) :

170 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

3.9V @ 240μA

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.3A, 10V

Terminal Position :

Single

Lead Free :

Lead Free

Transistor Element Material :

SILICON

FET Type :

N-Channel

Mount :

Through Hole

Power Dissipation-Max :

31W Tc