IPA80R310CEXKSA2

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Mfr.Part #
IPA80R310CEXKSA2
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 800V 16.7A TO220-FP
Stock
62,367
In Stock :
62,367

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
91nC @ 10V
Vgs(th) (Max) @ Id :
3.9V @ 1mA
RoHS Status :
ROHS3 Compliant
Published :
2008
Continuous Drain Current (ID) :
16.7A
Terminal Finish :
Tin (Sn)
Case Connection :
Isolated
Packaging :
Tube
Transistor Application :
SWITCHING
Number of Terminations :
3
FET Type :
N-Channel
Number of Elements :
1
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Halogen Free :
Halogen Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-220AB
Drain-source On Resistance-Max :
0.31Ohm
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
670 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
CoolMOS™
Package / Case :
TO-220-3 Full Pack
Factory Lead Time :
18 Weeks
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2320pF @ 100V
Power Dissipation-Max :
35W Tc
Max Dual Supply Voltage :
800V
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
310m Ω @ 11A, 10V
Terminal Position :
Single
Operating Temperature :
-40°C~150°C TJ
Lead Free :
Lead Free
Pbfree Code :
yes
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
16.7A Tc
Mount :
Through Hole
Pulsed Drain Current-Max (IDM) :
51A
JESD-30 Code :
R-PSFM-T3
Datasheets
IPA80R310CEXKSA2
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPA80R310CEXKSA2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3 Full Pack, Operating Temperature:-40°C~150°C TJ, Mounting Type:Through Hole, IPA80R310CEXKSA2 pinout, IPA80R310CEXKSA2 datasheet PDF, IPA80R310CEXKSA2 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPA80R310CEXKSA2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPA80R310CEXKSA2


N-Channel Tube 310m Ω @ 11A, 10V ±20V 2320pF @ 100V 91nC @ 10V TO-220-3 Full Pack

IPA80R310CEXKSA2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 670 mJ.A device's maximum input capacitance is 2320pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 51A, which is also its maximum rating peak drainage current.Powered by 800V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.

IPA80R310CEXKSA2 Features


the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 16.7A
based on its rated peak drain current 51A.


IPA80R310CEXKSA2 Applications


There are a lot of Infineon Technologies
IPA80R310CEXKSA2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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