IPA80R310CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.9V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

16.7A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

18 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

35W Tc

JEDEC-95 Code :

TO-220AB

Case Connection :

Isolated

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

310m Ω @ 11A, 10V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

16.7A

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Position :

Single

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

51A

Halogen Free :

Halogen Free

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2320pF @ 100V

Max Dual Supply Voltage :

800V

Published :

2008

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.31Ohm

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

670 mJ

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Series :

CoolMOS™