IPA80R1K0CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

ECCN Code :

EAR99

Turn-Off Delay Time :

72 ns

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Drain to Source Breakdown Voltage :

800V

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Max Junction Temperature (Tj) :

150°C

Published :

1997

FET Type :

N-Channel

Number of Terminations :

3

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Power Dissipation :

32W

Max Dual Supply Voltage :

800V

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

Vgs (Max) :

±20V

Terminal Position :

Single

Lead Free :

Lead Free

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.95Ohm

Rds On (Max) @ Id, Vgs :

950m Ω @ 3.6A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Series :

CoolMOS™ CE

Transistor Application :

SWITCHING

Case Connection :

Isolated

Height :

19.6mm

Transistor Element Material :

SILICON

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

230 mJ

Operating Temperature :

-40°C~150°C TJ

Power Dissipation-Max :

32W Tc

Continuous Drain Current (ID) :

5.7A