IPA80R1K0CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

230 mJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.95Ohm

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

950m Ω @ 3.6A, 10V

Power Dissipation-Max :

32W Tc

Series :

CoolMOS™ CE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Package / Case :

TO-220-3 Full Pack

Factory Lead Time :

18 Weeks

Continuous Drain Current (ID) :

5.7A

Number of Terminations :

3

Number of Channels :

1

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Mount :

Through Hole

Lead Free :

Lead Free

Max Dual Supply Voltage :

800V

Halogen Free :

Halogen Free

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Turn-Off Delay Time :

72 ns

Case Connection :

Isolated

Operating Temperature :

-40°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

1997

Max Junction Temperature (Tj) :

150°C

Turn On Delay Time :

25 ns

Height :

19.6mm

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

32W

Drain to Source Breakdown Voltage :

800V

Terminal Position :

Single

Pbfree Code :

yes

Vgs (Max) :

±20V