IPA80R310CEXKSA1
- Mfr.Part #
- IPA80R310CEXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 6.8A TO220
- Stock
- 45,636
- In Stock :
- 45,636
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 6 ns
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 35W Tc
- Mount :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Avalanche Energy Rating (Eas) :
- 670 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2320pF @ 100V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 6.8A Tc
- Series :
- CoolMOS™ CE
- Rise Time :
- 15ns
- Drain Current-Max (Abs) (ID) :
- 16.7A
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 800V
- Pulsed Drain Current-Max (IDM) :
- 51A
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 800V
- Turn On Delay Time :
- 25 ns
- Rds On (Max) @ Id, Vgs :
- 310m Ω @ 11A, 10V
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 6.8A
- Gate Charge (Qg) (Max) @ Vgs :
- 91nC @ 10V
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 3.9V @ 1mA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Published :
- 2015
- Turn-Off Delay Time :
- 72 ns
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Datasheets
- IPA80R310CEXKSA1

N-Channel Tube 310m Ω @ 11A, 10V 2320pF @ 100V 91nC @ 10V 800V TO-220-3 Full Pack
IPA80R310CEXKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 670 mJ.The maximum input capacitance of this device is 2320pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6.8A.As shown in the table below, the drain current of this device is 16.7A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 72 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 51A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.
IPA80R310CEXKSA1 Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 6.8A
the turn-off delay time is 72 ns
based on its rated peak drain current 51A.
a 800V drain to source voltage (Vdss)
IPA80R310CEXKSA1 Applications
There are a lot of Infineon Technologies
IPA80R310CEXKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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