IPA80R310CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mount :

Through Hole

Transistor Element Material :

SILICON

Fall Time (Typ) :

6 ns

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Number of Pins :

3

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

310m Ω @ 11A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

6.8A

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

51A

Series :

CoolMOS™ CE

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

35W Tc

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

670 mJ

Turn On Delay Time :

25 ns

Vgs(th) (Max) @ Id :

3.9V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Turn-Off Delay Time :

72 ns

Packaging :

Tube

Operating Temperature :

-40°C~150°C TJ

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

16.7A

Mounting Type :

Through Hole

Case Connection :

Isolated

Rise Time :

15ns

Input Capacitance (Ciss) (Max) @ Vds :

2320pF @ 100V

Drain to Source Voltage (Vdss) :

800V

DS Breakdown Voltage-Min :

800V

Published :

2015

Transistor Application :

SWITCHING