IPA80R280P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 500V

Avalanche Energy Rating (Eas) :

43 mJ

Vgs(th) (Max) @ Id :

3.5V @ 360μA

Surface Mount :

No

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

800V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

45A

Moisture Sensitivity Level (MSL) :

Not Applicable

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

30W Tc

Factory Lead Time :

18 Weeks

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

800V

Published :

2013

Number of Terminations :

3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Series :

CoolMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Transistor Element Material :

SILICON

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

280m Ω @ 7.2A, 10V

Drain-source On Resistance-Max :

0.28Ohm

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

FET Feature :

Super Junction

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

JESD-609 Code :

e3