IPA80R450P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Moisture Sensitivity Level (MSL) :

Not Applicable

Rds On (Max) @ Id, Vgs :

450m Ω @ 4.5A, 10V

FET Type :

N-Channel

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 220µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

11A

Series :

CoolMOS™

Factory Lead Time :

18 Weeks

Drain-source On Resistance-Max :

0.45Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

800V

JESD-30 Code :

R-PSFM-T3

Published :

2013

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 500V

Avalanche Energy Rating (Eas) :

29 mJ

Pulsed Drain Current-Max (IDM) :

29A

Number of Terminations :

3

Pbfree Code :

yes

DS Breakdown Voltage-Min :

800V

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Vgs (Max) :

±20V

Power Dissipation-Max :

29W Tc

FET Feature :

Super Junction

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

11A Tc