IPA80R1K4CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Fall Time (Typ) :

12 ns

Continuous Drain Current (ID) :

2.8A

Transistor Application :

SWITCHING

Number of Terminations :

3

Transistor Element Material :

SILICON

Series :

CoolMOS™ CE

Pbfree Code :

yes

Power Dissipation-Max :

31W Tc

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Lead Free :

Lead Free

Published :

2015

Pulsed Drain Current-Max (IDM) :

12A

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.3A, 10V

Drain to Source Voltage (Vdss) :

800V

DS Breakdown Voltage-Min :

800V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.9V @ 240μA

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

72 ns

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 100V

Mount :

Through Hole

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15ns

Turn On Delay Time :

25 ns

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

170 mJ

Case Connection :

Isolated

Terminal Position :

Single