IPA80R1K0CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

32W Tc

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

25 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Continuous Drain Current (ID) :

3.6A

Pulsed Drain Current-Max (IDM) :

18A

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Transistor Element Material :

SILICON

Fall Time (Typ) :

8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Vgs (Max) :

±20V

Pbfree Code :

yes

Mount :

Through Hole

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

800V

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

800V

Rds On (Max) @ Id, Vgs :

950m Ω @ 3.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

FET Type :

N-Channel

Published :

2008

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

5.7A

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.95Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Series :

CoolMOS™ CE

Turn-Off Delay Time :

72 ns

Terminal Position :

Single

Rise Time :

15ns