IPA80R650CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

33W Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Turn On Delay Time :

25 ns

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

24A

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

DS Breakdown Voltage-Min :

800V

Rds On (Max) @ Id, Vgs :

650m Ω @ 5.1A, 10V

Number of Pins :

3

ECCN Code :

EAR99

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

72 ns

Packaging :

Tube

Drain-source On Resistance-Max :

0.65Ohm

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3.9V @ 470μA

Published :

2015

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™ CE

Fall Time (Typ) :

10 ns

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±20V

Mount :

Through Hole

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15ns

Continuous Drain Current (ID) :

4.5A

Mounting Type :

Through Hole

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

8A

Drain to Source Voltage (Vdss) :

800V