FQP4P40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

9.4mm

Radiation Hardening :

No

Weight :

1.8g

Turn-Off Delay Time :

35 ns

Avalanche Energy Rating (Eas) :

260 mJ

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Width :

4.7mm

Continuous Drain Current (ID) :

3.5A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-400V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

400V

Threshold Voltage :

-5V

Current Rating :

-3.5A

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Length :

10.1mm

Rise Time :

55ns

Series :

QFET®

Vgs (Max) :

±30V

Number of Pins :

3

Voltage - Rated DC :

-400V

Number of Elements :

1

ECCN Code :

EAR99

Number of Terminations :

3

Fall Time (Typ) :

37 ns

Mount :

Through Hole

Turn On Delay Time :

13 ns

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

3.1 Ω @ 1.75A, 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

85W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Power Dissipation :

85W

Published :

2013