FQP4N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

3.8A

Weight :

1.8g

Drain Current-Max (Abs) (ID) :

3.6A

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

52 mJ

Mount :

Through Hole

Radiation Hardening :

No

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

FET Type :

N-Channel

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Power Dissipation :

45W

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

200V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drain to Source Breakdown Voltage :

200V

Turn-Off Delay Time :

15 ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 1.9A, 10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Current Rating :

3.8A

Turn On Delay Time :

7 ns

Power Dissipation-Max :

45W Tc

Fall Time (Typ) :

40 ns

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Lead Free :

Lead Free

Rise Time :

70ns

Element Configuration :

Single

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e3

Packaging :

Tube