FQP44N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

34m Ω @ 22A, 10V

Surface Mount :

No

Drain-source On Resistance-Max :

0.034Ohm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Power Dissipation-Max :

127W Tc

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Drain Current-Max (Abs) (ID) :

44A

DS Breakdown Voltage-Min :

80V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

176A

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±25V

Avalanche Energy Rating (Eas) :

450 mJ

Number of Terminations :

3

Pbfree Code :

yes

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Qualification Status :

COMMERCIAL

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Package / Case :

TO-220-3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1.43pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

80V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable