FQP44N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

127W Tc

Pin Count :

3

Avalanche Energy Rating (Eas) :

450 mJ

Drain-source On Resistance-Max :

0.034Ohm

JESD-30 Code :

R-PSFM-T3

Qualification Status :

COMMERCIAL

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

176A

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Package / Case :

TO-220-3

Series :

QFET®

Rds On (Max) @ Id, Vgs :

34m Ω @ 22A, 10V

Surface Mount :

No

DS Breakdown Voltage-Min :

80V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Packaging :

Tube

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.43pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±25V

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

80V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

44A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

FET Type :

N-Channel