FQP4N20

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

7 ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

40 ns

Package / Case :

TO-220-3

Rise Time :

70ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Continuous Drain Current (ID) :

3.8A

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Turn-Off Delay Time :

15 ns

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation-Max :

45W Tc

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

200V

Series :

QFET®

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 1.9A, 10V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Current Rating :

3.8A

Vgs (Max) :

±20V

Weight :

1.8g

Element Configuration :

Single

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Radiation Hardening :

No

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

3.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Power Dissipation :

45W

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

200V

Packaging :

Tube

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Avalanche Energy Rating (Eas) :

52 mJ

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc