FQP4N20

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

45W Tc

Terminal Finish :

Tin (Sn)

Number of Elements :

1

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

Voltage - Rated DC :

200V

Drain to Source Breakdown Voltage :

200V

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 1.9A, 10V

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Series :

QFET®

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 250μA

Fall Time (Typ) :

40 ns

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Avalanche Energy Rating (Eas) :

52 mJ

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

15 ns

Radiation Hardening :

No

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Turn On Delay Time :

7 ns

Pbfree Code :

yes

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

3.6A

Power Dissipation :

45W

Weight :

1.8g

Continuous Drain Current (ID) :

3.8A

Rise Time :

70ns

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Number of Terminations :

3

Package / Case :

TO-220-3

Current Rating :

3.8A