FQP4N20L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

70ns

Transistor Element Material :

SILICON

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

45W

Packaging :

Tube

Radiation Hardening :

No

FET Type :

N-Channel

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

200V

Avalanche Energy Rating (Eas) :

52 mJ

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

Fall Time (Typ) :

40 ns

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Pbfree Code :

yes

Continuous Drain Current (ID) :

3.8A

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 1.9A, 10V

Factory Lead Time :

4 Weeks

Drain Current-Max (Abs) (ID) :

3.6A

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

ECCN Code :

EAR99

Voltage - Rated DC :

200V

Mount :

Through Hole

Turn On Delay Time :

7 ns

Current Rating :

3.8A

Vgs(th) (Max) @ Id :

2V @ 250μA

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

15 ns

Number of Elements :

1

Power Dissipation-Max :

45W Tc

Weight :

1.8g