FQP4N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Rds On (Max) @ Id, Vgs :

1.75 Ω @ 1.8A, 10V

JESD-609 Code :

e3

Reach Compliance Code :

Unknown

Terminal Finish :

Tin

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

250V

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

14.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

250V

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Surface Mount :

No

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Series :

QFET®

Number of Elements :

1

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Number of Terminations :

3

Power Dissipation-Max :

52W Tc

Drain Current-Max (Abs) (ID) :

3.6A

Avalanche Energy Rating (Eas) :

52 mJ

Operating Temperature :

-55°C~150°C TJ