FQP45N15V2
- Mfr.Part #
- FQP45N15V2
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 45A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Dual Supply Voltage :
- 150V
- Resistance :
- 40mOhm
- Published :
- 2013
- Termination :
- Through Hole
- Power Dissipation-Max :
- 220W Tc
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Height :
- 9.4mm
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Threshold Voltage :
- 4V
- Width :
- 4.7mm
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Voltage :
- 150V
- Continuous Drain Current (ID) :
- 45A
- Series :
- QFET®
- Mount :
- Through Hole
- Current Rating :
- 45A
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 3030pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.1mm
- Fall Time (Typ) :
- 246 ns
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 22.5A, 10V
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 224 ns
- Current :
- 45A
- Rise Time :
- 232ns
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 150V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 22 ns
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Nominal Vgs :
- 4 V
- Element Configuration :
- Single
- Factory Lead Time :
- 5 Weeks
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-220AB
- Voltage - Rated DC :
- 150V
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 220W
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 10V
- Datasheets
- FQP45N15V2

N-Channel Tube 40m Ω @ 22.5A, 10V ±30V 3030pF @ 25V 94nC @ 10V TO-220-3
FQP45N15V2 Description
This N-channel enhanced power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, audio amplifiers, DC motor control and variable switching power applications.
FQP45N15V2 Features
45A, 150V, RDS(on) = 40mΩ(Max.) @VGS = 10 V, ID = 22.5A
Low gate charge ( Typ. 72nC)
Low Crss ( Typ. 135pF)
100% avalanche tested
175 ° C maximum junction temperature rating
FQP45N15V2 Applications
Other Industrial
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