FQP45N15V2
- Mfr.Part #
- FQP45N15V2
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 45A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 40mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3030pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- Height :
- 9.4mm
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2013
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 22.5A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 246 ns
- Rise Time :
- 232ns
- Threshold Voltage :
- 4V
- Continuous Drain Current (ID) :
- 45A
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 224 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Voltage :
- 150V
- Length :
- 10.1mm
- Width :
- 4.7mm
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Packaging :
- Tube
- Power Dissipation :
- 220W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current :
- 45A
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Current Rating :
- 45A
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 5 Weeks
- Mount :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 220W Tc
- Element Configuration :
- Single
- Termination :
- Through Hole
- Series :
- QFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 10V
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Nominal Vgs :
- 4 V
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 22 ns
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 150V
- Dual Supply Voltage :
- 150V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Drain to Source Breakdown Voltage :
- 150V
- Datasheets
- FQP45N15V2
FQP45N15V2 Documents

N-Channel Tube 40m Ω @ 22.5A, 10V ±30V 3030pF @ 25V 94nC @ 10V TO-220-3
FQP45N15V2 Description
This N-channel enhanced power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, audio amplifiers, DC motor control and variable switching power applications.
FQP45N15V2 Features
45A, 150V, RDS(on) = 40mΩ(Max.) @VGS = 10 V, ID = 22.5A
Low gate charge ( Typ. 72nC)
Low Crss ( Typ. 135pF)
100% avalanche tested
175 ° C maximum junction temperature rating
FQP45N15V2 Applications
Other Industrial
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