FQP45N15V2
- Mfr.Part #
- FQP45N15V2
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 45A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 220W
- Dual Supply Voltage :
- 150V
- Turn-Off Delay Time :
- 224 ns
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.1mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3030pF @ 25V
- Current Rating :
- 45A
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 150V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 22 ns
- Voltage :
- 150V
- Voltage - Rated DC :
- 150V
- Height :
- 9.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Termination :
- Through Hole
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 22.5A, 10V
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 30V
- Nominal Vgs :
- 4 V
- Current :
- 45A
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 232ns
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 45A
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- Series :
- QFET®
- Width :
- 4.7mm
- FET Type :
- N-Channel
- Resistance :
- 40mOhm
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Packaging :
- Tube
- Fall Time (Typ) :
- 246 ns
- Power Dissipation-Max :
- 220W Tc
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 4V
- Mount :
- Through Hole
- Factory Lead Time :
- 5 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- FQP45N15V2
FQP45N15V2 Documents

N-Channel Tube 40m Ω @ 22.5A, 10V ±30V 3030pF @ 25V 94nC @ 10V TO-220-3
FQP45N15V2 Description
This N-channel enhanced power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, audio amplifiers, DC motor control and variable switching power applications.
FQP45N15V2 Features
45A, 150V, RDS(on) = 40mΩ(Max.) @VGS = 10 V, ID = 22.5A
Low gate charge ( Typ. 72nC)
Low Crss ( Typ. 135pF)
100% avalanche tested
175 ° C maximum junction temperature rating
FQP45N15V2 Applications
Other Industrial
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