FQP44N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

90 ns

Width :

4.7mm

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Packaging :

Tube

Rise Time :

190ns

Drain to Source Breakdown Voltage :

100V

Power Dissipation-Max :

146W Tc

Fall Time (Typ) :

100 ns

Continuous Drain Current (ID) :

43.5A

Turn On Delay Time :

19 ns

Radiation Hardening :

No

Factory Lead Time :

5 Weeks

REACH SVHC :

No SVHC

Number of Pins :

3

Transistor Element Material :

SILICON

Power Dissipation :

146W

Lead Free :

Lead Free

Number of Elements :

1

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Series :

QFET®

Length :

10.1mm

Pbfree Code :

yes

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

39m Ω @ 21.75A, 10V

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Height :

9.4mm

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

1.8g

Mount :

Through Hole

Transistor Application :

SWITCHING

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Current Rating :

43.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

Published :

2000

Package / Case :

TO-220-3

Additional Feature :

FAST SWITCHING

Current - Continuous Drain (Id) @ 25°C :

43.5A Tc