FQP47P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

FET Type :

P-Channel

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Length :

10.1mm

Drain to Source Voltage (Vdss) :

60V

Current Rating :

-47A

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Resistance :

26mOhm

Packaging :

Tube

Avalanche Energy Rating (Eas) :

820 mJ

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

195 ns

Published :

2001

Number of Pins :

3

Continuous Drain Current (ID) :

47A

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

160W Tc

Height :

9.4mm

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

26m Ω @ 23.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Width :

4.7mm

Turn On Delay Time :

50 ns

Turn-Off Delay Time :

100 ns

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Element Configuration :

Single

JESD-609 Code :

e3

Series :

QFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-60V

Mounting Type :

Through Hole

Threshold Voltage :

-4V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation :

160W

Number of Terminations :

3

Weight :

1.8g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

REACH SVHC :

No SVHC

Voltage - Rated DC :

-60V

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Nominal Vgs :

-4 V

Rise Time :

450ns

Current - Continuous Drain (Id) @ 25°C :

47A Tc