FQP44N08
- Mfr.Part #
- FQP44N08
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 44A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±25V
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 80V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Peak Reflow Temperature (Cel) :
- Not Applicable
- FET Type :
- N-Channel
- Qualification Status :
- COMMERCIAL
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.43pF @ 25V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain Current-Max (Abs) (ID) :
- 44A
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 22A, 10V
- Drain to Source Voltage (Vdss) :
- 80V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Pulsed Drain Current-Max (IDM) :
- 176A
- Terminal Finish :
- MATTE TIN
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Series :
- QFET®
- Power Dissipation-Max :
- 127W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.034Ohm
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Datasheets
- FQP44N08

N-Channel Tube 34m Ω @ 22A, 10V ±25V 1.43pF @ 25V 50nC @ 10V 80V TO-220-3
FQP44N08 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.The maximum input capacitance of this device is 1.43pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 44A.There is no pulsed drain current maximum for this device based on its rated peak drain current 176A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 80V.The drain-to-source voltage (Vdss) of this transistor needs to be at 80V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FQP44N08 Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 176A.
a 80V drain to source voltage (Vdss)
FQP44N08 Applications
There are a lot of Rochester Electronics, LLC
FQP44N08 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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