FQP4N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

900V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

4A

Fall Time (Typ) :

35 ns

Power Dissipation-Max :

140W Tc

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Weight :

1.8g

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Number of Pins :

3

Qualification Status :

Not Qualified

Length :

9.9mm

Threshold Voltage :

5V

Current Rating :

4A

Voltage - Rated DC :

900V

Power Dissipation :

140W

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Height :

9.2mm

Pbfree Code :

yes

Package / Case :

TO-220-3

Lead Free :

Lead Free

Packaging :

Tube

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

4.2 Ω @ 2A, 10V

Continuous Drain Current (ID) :

4A

Number of Elements :

1

Vgs (Max) :

±30V

Contact Plating :

Tin

Width :

4.5mm

Number of Terminations :

3

Transistor Application :

SWITCHING

FET Type :

N-Channel

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 25V

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

40 ns

Published :

2013

Avalanche Energy Rating (Eas) :

570 mJ

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Turn On Delay Time :

25 ns

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Rise Time :

50ns