FQP4N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On (Max) @ Id, Vgs :

4.2 Ω @ 2A, 10V

Drain to Source Breakdown Voltage :

900V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

140W Tc

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Series :

QFET®

Transistor Application :

SWITCHING

Number of Pins :

3

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Rise Time :

50ns

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

9.9mm

Package / Case :

TO-220-3

Element Configuration :

Single

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

4A

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

30V

REACH SVHC :

No SVHC

Weight :

1.8g

Height :

9.2mm

Vgs (Max) :

±30V

Turn-Off Delay Time :

40 ns

ECCN Code :

EAR99

Power Dissipation :

140W

Avalanche Energy Rating (Eas) :

570 mJ

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Threshold Voltage :

5V

Width :

4.5mm

Number of Terminations :

3

Turn On Delay Time :

25 ns

Fall Time (Typ) :

35 ns

Continuous Drain Current (ID) :

4A

Contact Plating :

Tin

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Current Rating :

4A

Voltage - Rated DC :

900V

Pbfree Code :

yes