FQP4N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Weight :

1.8g

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3.9A

Turn-Off Delay Time :

35 ns

Power Dissipation :

130W

Qualification Status :

Not Qualified

Turn On Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.95A, 10V

Packaging :

Tube

Mount :

Through Hole

Drain to Source Breakdown Voltage :

800V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

460 mJ

Rise Time :

45ns

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Published :

2000

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Width :

4.7mm

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Fall Time (Typ) :

35 ns

Series :

QFET®

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Voltage - Rated DC :

800V

Transistor Element Material :

SILICON

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Length :

10.1mm

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Current Rating :

3.9A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±30V

Height :

9.4mm

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

130W Tc