FQP4N80
- Mfr.Part #
- FQP4N80
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 3,283
- In Stock :
- 3,283
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Factory Lead Time :
- 4 Weeks
- Turn-Off Delay Time :
- 35 ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Width :
- 4.7mm
- Length :
- 10.1mm
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 3.9A Tc
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 880pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 460 mJ
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Series :
- QFET®
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 800V
- Height :
- 9.4mm
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 130W
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Published :
- 2000
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 3.9A
- Current Rating :
- 3.9A
- Power Dissipation-Max :
- 130W Tc
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Number of Pins :
- 3
- Turn On Delay Time :
- 16 ns
- Fall Time (Typ) :
- 35 ns
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 3.6 Ω @ 1.95A, 10V
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Weight :
- 1.8g
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 45ns
- Voltage - Rated DC :
- 800V
- Datasheets
- FQP4N80

N-Channel Tube 3.6 Ω @ 1.95A, 10V ±30V 880pF @ 25V 25nC @ 10V TO-220-3
FQP4N80 Description
The ON Semiconductor FQP4N80 N-Channel enhancement mode power MOSFET is made with the company's patented planar stripe and DMOS technology. This sophisticated MOSFET technology has been specifically designed to deliver excellent switching performance and strong avalanche energy strength while reducing on-state resistance.
FQP4N80 Features
-
Low Crss ( Typ. 8.6pF)
-
100% avalanche tested
-
3.9A, 800V, RDS(on) = 3.6Ω(Max.) @VGS = 10 V, ID = 1.95A
-
Low gate charge ( Typ. 19nC)
FQP4N80 Applications
Lighting
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