FQP4N80

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Mfr.Part #
FQP4N80
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Stock
3,283
In Stock :
3,283

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time :
4 Weeks
Turn-Off Delay Time :
35 ns
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Pbfree Code :
yes
Width :
4.7mm
Length :
10.1mm
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
30V
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
3.9A Tc
JEDEC-95 Code :
TO-220AB
Input Capacitance (Ciss) (Max) @ Vds :
880pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
460 mJ
Element Configuration :
Single
Package / Case :
TO-220-3
Series :
QFET®
Mount :
Through Hole
Drain to Source Breakdown Voltage :
800V
Height :
9.4mm
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
130W
Number of Elements :
1
FET Type :
N-Channel
Published :
2000
Terminal Finish :
Tin (Sn)
Continuous Drain Current (ID) :
3.9A
Current Rating :
3.9A
Power Dissipation-Max :
130W Tc
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Number of Pins :
3
Turn On Delay Time :
16 ns
Fall Time (Typ) :
35 ns
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
3.6 Ω @ 1.95A, 10V
Number of Terminations :
3
Vgs(th) (Max) @ Id :
5V @ 250μA
Weight :
1.8g
Vgs (Max) :
±30V
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
45ns
Voltage - Rated DC :
800V
Datasheets
FQP4N80
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP4N80 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, FQP4N80 pinout, FQP4N80 datasheet PDF, FQP4N80 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP4N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQP4N80


N-Channel Tube 3.6 Ω @ 1.95A, 10V ±30V 880pF @ 25V 25nC @ 10V TO-220-3

FQP4N80 Description


The ON Semiconductor FQP4N80 N-Channel enhancement mode power MOSFET is made with the company's patented planar stripe and DMOS technology. This sophisticated MOSFET technology has been specifically designed to deliver excellent switching performance and strong avalanche energy strength while reducing on-state resistance.



FQP4N80 Features


  • Low Crss ( Typ. 8.6pF)

  • 100% avalanche tested

  • 3.9A, 800V, RDS(on) = 3.6Ω(Max.) @VGS = 10 V, ID = 1.95A

  • Low gate charge ( Typ. 19nC)



FQP4N80 Applications


Lighting


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