FQP4N80

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

JEDEC-95 Code :

TO-220AB

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Qualification Status :

Not Qualified

Length :

10.1mm

Turn-Off Delay Time :

35 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Number of Elements :

1

Drain to Source Breakdown Voltage :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Turn On Delay Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

1.8g

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Pins :

3

Series :

QFET®

Packaging :

Tube

Published :

2000

Width :

4.7mm

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Mounting Type :

Through Hole

Height :

9.4mm

Vgs (Max) :

±30V

ECCN Code :

EAR99

Package / Case :

TO-220-3

Power Dissipation :

130W

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

460 mJ

Fall Time (Typ) :

35 ns

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.95A, 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

130W Tc

Continuous Drain Current (ID) :

3.9A

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate to Source Voltage (Vgs) :

30V

Rise Time :

45ns

Voltage - Rated DC :

800V

Lead Free :

Lead Free

Current Rating :

3.9A