FQP4N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

3.4A Tc

Supplier Device Package :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

30 ns

Gate to Source Voltage (Vgs) :

30V

Drain to Source Resistance :

2.7Ohm

Number of Pins :

3

Continuous Drain Current (ID) :

3.4A

Turn-Off Delay Time :

20 ns

Current Rating :

3.4A

Mounting Type :

Through Hole

Lead Free :

Lead Free

Rds On Max :

2.7 Ω

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation-Max :

70W Tc

Max Operating Temperature :

150°C

Voltage - Rated DC :

500V

Drain to Source Voltage (Vdss) :

500V

Packaging :

Tube

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

2.7Ohm @ 1.7A, 10V

Power Dissipation :

70W

Mount :

Through Hole

Min Operating Temperature :

-55°C

Number of Elements :

1

Element Configuration :

Single

Input Capacitance :

460pF

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Published :

2000

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Drain to Source Breakdown Voltage :

500V

Rise Time :

45ns

Series :

QFET®