FQP1P50
- Mfr.Part #
- FQP1P50
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 1.5A TO220-3
- Stock
- 286
- In Stock :
- 286
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Published :
- 2000
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 10.5Ohm @ 750mA, 10V
- Supplier Device Package :
- TO-220-3
- Power Dissipation-Max :
- 63W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Tc
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- QFET®
- Datasheets
- FQP1P50

P-Channel Tube 10.5Ohm @ 750mA, 10V ±30V 350pF @ 25V 14nC @ 10V 500V TO-220-3
FQP1P50 Description
FQP1P50 is a type of QFET? P-channel enhancement-mode MOSFET provided by ON Semiconductor based on the proprietary, planar stripe, DMOS technology. Based on this technology, it is able to provide low on-state resistance, fast switching speed, and withstand high energy pulse in the avalanche and commutation mode. As a result, FQP2P40 is capable of providing considerable benefits for electronic lamp ballasts based on the complementary half-bridge topology.
FQP1P50 Features
-
DMOS technology
-
Low on-state resistance
-
Fast switching speed
-
High dv/dt capability
-
Available in the TO-220 package
FQP1P50 Applications
-
Electronic lamp ballasts
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