FQP11P06
- Mfr.Part #
- FQP11P06
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 3,651
- In Stock :
- 3,651
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 4 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Width :
- 4.7mm
- Operating Temperature :
- -55°C~175°C TJ
- Current Rating :
- -11.4A
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 60V
- Turn-Off Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.1mm
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A Tc
- Voltage - Rated DC :
- -60V
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 5.7A, 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Rise Time :
- 40ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 25V
- Fall Time (Typ) :
- 45 ns
- Vgs (Max) :
- ±25V
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 6.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Number of Terminations :
- 3
- Height :
- 15.38mm
- Power Dissipation-Max :
- 53W Tc
- Weight :
- 1.8g
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 11.4A
- Drain to Source Breakdown Voltage :
- -60V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 45.6A
- Mount :
- Through Hole
- Series :
- QFET®
- Power Dissipation :
- 53W
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Number of Pins :
- 3
- FET Type :
- P-Channel
- Lead Free :
- Lead Free
- Datasheets
- FQP11P06
FQP11P06 Documents

P-Channel Tube 175m Ω @ 5.7A, 10V ±25V 550pF @ 25V 17nC @ 10V 60V TO-220-3
FQP11P06 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced tech no logy has been specially tailored to minimize on-state resistanee, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management 泊 portable and battery-operated products.
FQP11P06 Features
?RDS(on) = 175 mQ (Max.) @ VGS = -10 V, lD =5 7 A @ -11.4 A, -60 V, RDS(on) = 175 mQ (Max.) @ VGS = -10 V, lD =5 7 A
?Affordable Gate Charge (Typ. 13 nC)
?Extremely Low Crss (Typ. 45 pF)
?Avalanche-tested to the nth degree
?Maximum Junction Temperature: 175°C
FQP11P06 Applications
Switching applications
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