FQP11P06

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Mfr.Part #
FQP11P06
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Stock
3,651
In Stock :
3,651

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-220-3
Length :
10.1mm
Input Capacitance (Ciss) (Max) @ Vds :
550pF @ 25V
Fall Time (Typ) :
45 ns
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~175°C TJ
Operating Mode :
ENHANCEMENT MODE
Width :
4.7mm
Continuous Drain Current (ID) :
11.4A
Number of Pins :
3
Vgs(th) (Max) @ Id :
4V @ 250µA
Published :
2013
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current Rating :
-11.4A
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
-60V
Turn On Delay Time :
6.5 ns
Drain to Source Breakdown Voltage :
-60V
Pulsed Drain Current-Max (IDM) :
45.6A
Number of Terminations :
3
Terminal Finish :
Tin (Sn)
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Power Dissipation :
53W
Pbfree Code :
yes
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±25V
Lead Free :
Lead Free
Element Configuration :
Single
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Height :
15.38mm
Factory Lead Time :
4 Weeks
Current - Continuous Drain (Id) @ 25°C :
11.4A Tc
Turn-Off Delay Time :
15 ns
Power Dissipation-Max :
53W Tc
Weight :
1.8g
Radiation Hardening :
No
FET Type :
P-Channel
Mounting Type :
Through Hole
JESD-609 Code :
e3
Series :
QFET®
Gate to Source Voltage (Vgs) :
25V
Drain to Source Voltage (Vdss) :
60V
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
175m Ω @ 5.7A, 10V
JEDEC-95 Code :
TO-220AB
Rise Time :
40ns
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP11P06 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, FQP11P06 pinout, FQP11P06 datasheet PDF, FQP11P06 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP11P06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQP11P06


P-Channel Tube 175m Ω @ 5.7A, 10V ±25V 550pF @ 25V 17nC @ 10V 60V TO-220-3

FQP11P06 Description


These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced tech no logy has been specially tailored to minimize on-state resistanee, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management 泊 portable and battery-operated products.



FQP11P06 Features


?RDS(on) = 175 mQ (Max.) @ VGS = -10 V, lD =5 7 A @ -11.4 A, -60 V, RDS(on) = 175 mQ (Max.) @ VGS = -10 V, lD =5 7 A


?Affordable Gate Charge (Typ. 13 nC)


?Extremely Low Crss (Typ. 45 pF)


?Avalanche-tested to the nth degree


?Maximum Junction Temperature: 175°C



FQP11P06 Applications


Switching applications


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