FQP10N20L
- Mfr.Part #
- FQP10N20L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 13,410
- In Stock :
- 13,410
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 200 V
- Qualification Status :
- COMMERCIAL
- Surface Mount :
- No
- 2nd Connector :
- TNC Jack
- Reach Compliance Code :
- Unknown
- 1st Connector Mounting Feature :
- Bulkhead - Front Side Nut
- 2nd Contact Gender :
- FEMALE
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e0
- Cable Type :
- RG-58
- Number of Terminals :
- 3
- Avalanche Energy Rating (Eas) :
- 180 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Base Product Number :
- Q-1S04K0
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- TIN LEAD
- Package :
- Bag
- Style :
- N-Type to TNC
- Manufacturer :
- Rochester Electronics LLC
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -
- Pin Count :
- 3
- 1st Connector :
- N-Type Jack, Right Angle
- Pbfree Code :
- No
- Product Status :
- Active
- Color :
- Black
- Drain-source On Resistance-Max :
- 0.38 Ω
- Series :
- -
- Length :
- 118.1 (3.0m) 9.8
- 2nd Connector Mounting Feature :
- Bulkhead - Front Side Nut
- 1st Connector Mounting Type :
- Panel Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Ingress Protection :
- -
- Polarity/Channel Type :
- N-Channel
- Features :
- Shielded
- Frequency - Max :
- 6 GHz
- Terminal Form :
- THROUGH-HOLE
- Number of Elements :
- 1
- 2nd Connector Mounting Type :
- Panel Mount
- 1st Contact Gender :
- FEMALE
- Pulsed Drain Current-Max (IDM) :
- 40 A
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Overall Impedance :
- 50 Ohms
- Datasheets
- FQP10N20L

FQP10N20L Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 180 mJ.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40 A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200 V in order to maintain normal operation.
FQP10N20L Features
the avalanche energy rating (Eas) is 180 mJ
based on its rated peak drain current 40 A.
FQP10N20L Applications
There are a lot of ON Semiconductor
FQP10N20L applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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