FQP11N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

81 ns

Operating Mode :

ENHANCEMENT MODE

Height :

9.4mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

89ns

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Factory Lead Time :

9 Weeks

Pbfree Code :

yes

Package / Case :

TO-220-3

Current :

10A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1090pF @ 25V

Drain to Source Breakdown Voltage :

400V

Length :

10.1mm

JESD-609 Code :

e3

Voltage - Rated DC :

400V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

FET Type :

N-Channel

Element Configuration :

Single

Packaging :

Tube

REACH SVHC :

No SVHC

Published :

2005

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Current Rating :

10.5A

Width :

4.7mm

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

530m Ω @ 5.25A, 10V

Power Dissipation :

135W

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Fall Time (Typ) :

81 ns

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

530mOhm

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Number of Elements :

1

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Continuous Drain Current (ID) :

10.5A

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage :

400V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

4V

Power Dissipation-Max :

135W Tc

Turn On Delay Time :

14 ns