FQP11P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

53W Tc

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Drain to Source Breakdown Voltage :

-60V

Factory Lead Time :

4 Weeks

Vgs (Max) :

±25V

Power Dissipation :

53W

Rise Time :

40ns

FET Type :

P-Channel

Element Configuration :

Single

Pbfree Code :

yes

Published :

2013

Turn-Off Delay Time :

15 ns

Pulsed Drain Current-Max (IDM) :

45.6A

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Lead Free :

Lead Free

Width :

4.7mm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Continuous Drain Current (ID) :

11.4A

Series :

QFET®

Rds On (Max) @ Id, Vgs :

175m Ω @ 5.7A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Weight :

1.8g

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Voltage - Rated DC :

-60V

Height :

15.38mm

Mount :

Through Hole

Mounting Type :

Through Hole

Turn On Delay Time :

6.5 ns

Current Rating :

-11.4A

Packaging :

Tube

Radiation Hardening :

No

Fall Time (Typ) :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.1mm