FQP11P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.7mm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Pulsed Drain Current-Max (IDM) :

45.6A

Length :

10.1mm

Packaging :

Tube

Number of Elements :

1

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

Height :

15.38mm

Number of Terminations :

3

Power Dissipation :

53W

FET Type :

P-Channel

ECCN Code :

EAR99

Fall Time (Typ) :

45 ns

Radiation Hardening :

No

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

25V

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mount :

Through Hole

Series :

QFET®

Element Configuration :

Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Rds On (Max) @ Id, Vgs :

175m Ω @ 5.7A, 10V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

11.4A

Mounting Type :

Through Hole

Current Rating :

-11.4A

Vgs (Max) :

±25V

Weight :

1.8g

Rise Time :

40ns

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Power Dissipation-Max :

53W Tc

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Voltage - Rated DC :

-60V

Number of Pins :

3

Pbfree Code :

yes

Turn On Delay Time :

6.5 ns

Drain to Source Breakdown Voltage :

-60V

Turn-Off Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2013