FQP11N40
- Mfr.Part #
- FQP11N40
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 11.4A TO220-3
- Stock
- 1,919
- In Stock :
- 1,919
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Current :
- 10A
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1090pF @ 25V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 10.5A
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 400V
- Power Dissipation-Max :
- 135W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2005
- Current Rating :
- 10.5A
- ECCN Code :
- EAR99
- Factory Lead Time :
- 9 Weeks
- Turn On Delay Time :
- 14 ns
- Width :
- 4.7mm
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Tc
- Voltage :
- 400V
- Pbfree Code :
- yes
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-220-3
- Height :
- 9.4mm
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 135W
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Mount :
- Through Hole
- Threshold Voltage :
- 4V
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 400V
- Rise Time :
- 89ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 81 ns
- Length :
- 10.1mm
- Element Configuration :
- Single
- Resistance :
- 530mOhm
- Rds On (Max) @ Id, Vgs :
- 530m Ω @ 5.25A, 10V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 81 ns
- Series :
- QFET®
- Mounting Type :
- Through Hole
- Datasheets
- FQP11N40

N-Channel Tube 530m Ω @ 5.25A, 10V ±30V 1090pF @ 25V 35nC @ 10V TO-220-3
FQP11N40C Description
This N-channel enhanced mode power MOSFET is produced using proprietary flat stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
FQP11N40C Features
10.5A, 400V, RDS(on) = 530mΩ(Max.) @VGS = 10 V, ID = 5.25A
Low gate charge ( Typ. 28nC)
Low Crss ( Typ. 85pF)
100% avalanche tested
FQP11N40C Applications
Lighting
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