FQP10N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2.04pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

9.5A

Package / Case :

TO-220-3

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Number of Terminations :

3

Series :

QFET®

Peak Reflow Temperature (Cel) :

Not Applicable

Additional Feature :

FAST SWITCHING

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Mounting Type :

Through Hole

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

38A

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

730m Ω @ 4.75A, 10V

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

700 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

600V

Drain-source On Resistance-Max :

0.73Ohm

Terminal Position :

Single

Reach Compliance Code :

Unknown

Power Dissipation-Max :

156W Tc