FQP12N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Terminal Finish :

Tin

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.7Ohm

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

10.5A

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

1.9pF @ 25V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

790 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Pulsed Drain Current-Max (IDM) :

42A

Pin Count :

3

Packaging :

Tube

Reach Compliance Code :

Unknown

Power Dissipation-Max :

180W Tc

DS Breakdown Voltage-Min :

600V

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

700m Ω @ 5.3A, 10V