FQP10N20C

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Mfr.Part #
FQP10N20C
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 200V 9.5A TO220-3
Stock
7,528
In Stock :
7,528

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Voltage - Rated DC :
200V
Weight :
1.8g
Gate to Source Voltage (Vgs) :
30V
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
4V @ 250µA
Series :
QFET®
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
11 ns
Fall Time (Typ) :
72 ns
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
9.5A Tc
Power Dissipation-Max :
72W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
9.5A
Current Rating :
9.5A
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 25V
Terminal Finish :
Tin (Sn)
Factory Lead Time :
8 Weeks
ECCN Code :
EAR99
Number of Pins :
3
Number of Elements :
1
Height :
9.4mm
Package / Case :
TO-220-3
Vgs (Max) :
±30V
Width :
4.7mm
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Published :
2013
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Drain to Source Breakdown Voltage :
200V
Packaging :
Tube
Number of Terminations :
3
Length :
10.1mm
Power Dissipation :
72W
Rds On (Max) @ Id, Vgs :
360m Ω @ 4.75A, 10V
JEDEC-95 Code :
TO-220AB
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Turn-Off Delay Time :
70 ns
Pbfree Code :
yes
FET Type :
N-Channel
Radiation Hardening :
No
Transistor Application :
SWITCHING
Rise Time :
92ns
Resistance :
360mOhm
Lead Free :
Lead Free
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP10N20C from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, FQP10N20C pinout, FQP10N20C datasheet PDF, FQP10N20C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP10N20C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP10N20C


N-Channel Tube 360m Ω @ 4.75A, 10V ±30V 510pF @ 25V 26nC @ 10V TO-220-3

FQP10N20C  Description


This N-channel enhanced mode power MOSFET FQP10N20C  is produced using proprietary flat stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.

 



 

FQP10N20C    Features

 

9.5A, 200V, RDS(on) = 0.36Ω@VGS = 10V

Low gate charge ( typical 20 nC)

Low Crss ( typical 40.5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

 

FQP10N20C     Applications


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