FQP10N20C

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Mfr.Part #
FQP10N20C
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 200V 9.5A TO220-3
Stock
7,528
In Stock :
7,528

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
360m Ω @ 4.75A, 10V
Turn-Off Delay Time :
70 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
72 ns
Power Dissipation-Max :
72W Tc
Number of Elements :
1
Series :
QFET®
Vgs (Max) :
±30V
JEDEC-95 Code :
TO-220AB
Power Dissipation :
72W
Turn On Delay Time :
11 ns
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
9.5A Tc
Factory Lead Time :
8 Weeks
Resistance :
360mOhm
Element Configuration :
Single
FET Type :
N-Channel
JESD-609 Code :
e3
Package / Case :
TO-220-3
Terminal Finish :
Tin (Sn)
Rise Time :
92ns
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Current Rating :
9.5A
Published :
2013
Voltage - Rated DC :
200V
Drain to Source Breakdown Voltage :
200V
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
Mount :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Weight :
1.8g
Length :
10.1mm
Width :
4.7mm
Mounting Type :
Through Hole
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Number of Pins :
3
Transistor Element Material :
SILICON
Height :
9.4mm
Lead Free :
Lead Free
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
4V @ 250µA
Continuous Drain Current (ID) :
9.5A
Gate to Source Voltage (Vgs) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 25V
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP10N20C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, FQP10N20C pinout, FQP10N20C datasheet PDF, FQP10N20C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP10N20C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP10N20C


N-Channel Tube 360m Ω @ 4.75A, 10V ±30V 510pF @ 25V 26nC @ 10V TO-220-3

FQP10N20C  Description


This N-channel enhanced mode power MOSFET FQP10N20C  is produced using proprietary flat stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.

 



 

FQP10N20C    Features

 

9.5A, 200V, RDS(on) = 0.36Ω@VGS = 10V

Low gate charge ( typical 20 nC)

Low Crss ( typical 40.5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

 

FQP10N20C     Applications


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