FQP10N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

9.5A

Transistor Element Material :

SILICON

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Fall Time (Typ) :

72 ns

Power Dissipation :

72W

Turn-Off Delay Time :

70 ns

Turn On Delay Time :

11 ns

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Mount :

Through Hole

Power Dissipation-Max :

72W Tc

JEDEC-95 Code :

TO-220AB

Weight :

1.8g

Width :

4.7mm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Length :

10.1mm

Terminal Finish :

Tin (Sn)

Number of Pins :

3

JESD-609 Code :

e3

Radiation Hardening :

No

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

30V

Resistance :

360mOhm

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Package / Case :

TO-220-3

Height :

9.4mm

Current Rating :

9.5A

Mounting Type :

Through Hole

Number of Terminations :

3

Element Configuration :

Single

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

200V

Rise Time :

92ns

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Voltage - Rated DC :

200V

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

360m Ω @ 4.75A, 10V

Pbfree Code :

yes