FQP10N20C

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Mfr.Part #
FQP10N20C
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 200V 9.5A TO220-3
Stock
7,528
In Stock :
7,528

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Rds On (Max) @ Id, Vgs :
360m Ω @ 4.75A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn-Off Delay Time :
70 ns
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
72W
Length :
10.1mm
Operating Mode :
ENHANCEMENT MODE
JEDEC-95 Code :
TO-220AB
Element Configuration :
Single
Terminal Finish :
Tin (Sn)
Fall Time (Typ) :
72 ns
Transistor Element Material :
SILICON
Factory Lead Time :
8 Weeks
Mount :
Through Hole
Transistor Application :
SWITCHING
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2013
Radiation Hardening :
No
Continuous Drain Current (ID) :
9.5A
Rise Time :
92ns
Voltage - Rated DC :
200V
Package / Case :
TO-220-3
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
30V
Drain to Source Breakdown Voltage :
200V
Turn On Delay Time :
11 ns
Height :
9.4mm
Width :
4.7mm
Lead Free :
Lead Free
Resistance :
360mOhm
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 25V
Power Dissipation-Max :
72W Tc
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Current Rating :
9.5A
Number of Pins :
3
Weight :
1.8g
FET Type :
N-Channel
Series :
QFET®
ECCN Code :
EAR99
Packaging :
Tube
Number of Terminations :
3
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
9.5A Tc
JESD-609 Code :
e3
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP10N20C from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, FQP10N20C pinout, FQP10N20C datasheet PDF, FQP10N20C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP10N20C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP10N20C


N-Channel Tube 360m Ω @ 4.75A, 10V ±30V 510pF @ 25V 26nC @ 10V TO-220-3

FQP10N20C  Description


This N-channel enhanced mode power MOSFET FQP10N20C  is produced using proprietary flat stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.

 



 

FQP10N20C    Features

 

9.5A, 200V, RDS(on) = 0.36Ω@VGS = 10V

Low gate charge ( typical 20 nC)

Low Crss ( typical 40.5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

 

FQP10N20C     Applications


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