FQP10N20CTSTU
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- Mfr.Part #
- FQP10N20CTSTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 9.5A TO220-3
- Stock
- 39,433
- In Stock ：
- 39,433
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Tc
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 360mOhm @ 4.75A, 10V
- Series :
- QFET®
- Drain to Source Voltage (Vdss) :
- 200V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 72W Tc
- Vgs (Max) :
- ±30V
- Datasheets
- FQP10N20CTSTU
N-Channel Tube 360mOhm @ 4.75A, 10V ±30V 510pF @ 25V 26nC @ 10V 200V TO-220-3
FQP10N20CTSTU Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 510pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQP10N20CTSTU Features
a 200V drain to source voltage (Vdss)
FQP10N20CTSTU Applications
There are a lot of Rochester Electronics, LLC
FQP10N20CTSTU applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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