FQP19N20L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.14Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Vgs (Max) :

±20V

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

21A

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

250 mJ

Series :

QFET®

Transistor Application :

SWITCHING

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

84A

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

200V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2.2pF @ 25V

Peak Reflow Temperature (Cel) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

Power Dissipation-Max :

140W Tc

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

21A Tc

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

140m Ω @ 10.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

DS Breakdown Voltage-Min :

200V