FQP19N20L

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

250 mJ

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Position :

Single

Number of Terminations :

3

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

21A

FET Type :

N-Channel

DS Breakdown Voltage-Min :

200V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

140m Ω @ 10.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Power Dissipation-Max :

140W Tc

Transistor Element Material :

SILICON

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Vgs (Max) :

±20V

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

2.2pF @ 25V

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

200V

Peak Reflow Temperature (Cel) :

Not Applicable

Packaging :

Tube

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

84A

Vgs(th) (Max) @ Id :

2V @ 250μA

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

Surface Mount :

No

Drain-source On Resistance-Max :

0.14Ohm

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ