FQP19N20C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

170mOhm

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Width :

4.7mm

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mount :

Through Hole

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Height :

9.4mm

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

76A

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

200V

Length :

10.1mm

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Fall Time (Typ) :

115 ns

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Terminations :

3

Number of Pins :

3

Drain to Source Breakdown Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 25V

ECCN Code :

EAR99

Weight :

1.8g

Series :

QFET®

Package / Case :

TO-220-3

Element Configuration :

Single

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

170m Ω @ 9.5A, 10V

Power Dissipation-Max :

139W Tc

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Turn On Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Factory Lead Time :

5 Weeks

Continuous Drain Current (ID) :

19A

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2013

Number of Elements :

1

Threshold Voltage :

4V

Rise Time :

150ns

Turn-Off Delay Time :

135 ns

Operating Mode :

ENHANCEMENT MODE

Current Rating :

19A

Power Dissipation :

139W