FQP19N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Width :

4.7mm

Mount :

Through Hole

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Rise Time :

150ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Continuous Drain Current (ID) :

19A

Series :

QFET®

Radiation Hardening :

No

Current Rating :

19A

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

9.4mm

ECCN Code :

EAR99

Power Dissipation-Max :

139W Tc

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Number of Elements :

1

Turn On Delay Time :

15 ns

REACH SVHC :

No SVHC

Length :

10.1mm

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Rds On (Max) @ Id, Vgs :

170m Ω @ 9.5A, 10V

Weight :

1.8g

Factory Lead Time :

5 Weeks

Resistance :

170mOhm

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 25V

Number of Pins :

3

Voltage - Rated DC :

200V

Pulsed Drain Current-Max (IDM) :

76A

Drain to Source Breakdown Voltage :

200V

Threshold Voltage :

4V

Published :

2013

Fall Time (Typ) :

115 ns

Power Dissipation :

139W

Turn-Off Delay Time :

135 ns

Number of Terminations :

3