FQP19N10L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

76A

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

75W Tc

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

19A

Drain-source On Resistance-Max :

0.11Ohm

Avalanche Energy Rating (Eas) :

220 mJ

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

Not Applicable

Rds On (Max) @ Id, Vgs :

100m Ω @ 9.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Terminal Position :

Single

Pin Count :

3

Surface Mount :

No

FET Type :

N-Channel

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

100V

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Application :

SWITCHING

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Mounting Type :

Through Hole