FQP19N10
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- Mfr.Part #
- FQP19N10
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 19A TO220-3
- Stock
- 23,684
- In Stock ：
- 23,684
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Mounting Type :
- Through Hole
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 75W Tc
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 9.5A, 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 780pF @ 25V
- Packaging :
- Tube
- Supplier Device Package :
- TO-220-3
- Published :
- 2000
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Datasheets
- FQP19N10
N-Channel Tube 100mOhm @ 9.5A, 10V ±25V 780pF @ 25V 25nC @ 10V 100V TO-220-3
FQP19N10 Description
FQP19N10 N-Channel MOSFET is to be used in a variety of applications. FQP19N10 MOSFET is ideal for reducing resistance to on-state and offering better switching performance as well as being able to provide high avalanche energy. ON Semiconductor FQP19N10 is widely used in switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQP19N10 Features
Low gate charge
Low Crss
13.6A, 100V, RDS(on) = 100mΩ
100% avalanche tested
Maximum junction temperature rating: 175°C
FQP19N10 Applications
Audio amplifier
Switching power applications
DC motor control
High-voltage applications
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