FQP18N50V2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

265m Ω @ 9A, 10V

Surface Mount :

No

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Number of Elements :

1

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

JESD-609 Code :

e3

Pin Count :

3

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

500V

Power Dissipation-Max :

208W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3.29pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Series :

QFET®

Reach Compliance Code :

Unknown

Terminal Position :

Single

FET Type :

N-Channel

Package / Case :

TO-220-3

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

DS Breakdown Voltage-Min :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

72A

Peak Reflow Temperature (Cel) :

Not Applicable

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Packaging :

Tube

Drain-source On Resistance-Max :

0.265Ohm

Avalanche Energy Rating (Eas) :

330 mJ

Drain Current-Max (Abs) (ID) :

18A