FQP17P10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

Through Hole

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

-16.5A

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Power Dissipation :

100W

Max Junction Temperature (Tj) :

175°C

Fall Time (Typ) :

100 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

190m Ω @ 8.25A, 10V

JESD-609 Code :

e3

Current Rating :

-16.5A

Dual Supply Voltage :

-100V

Nominal Vgs :

-4 V

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-100V

Width :

4.7mm

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Packaging :

Tube

Height :

20.4mm

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

66A

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

-100V

JEDEC-95 Code :

TO-220AB

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Rise Time :

200ns

Avalanche Energy Rating (Eas) :

580 mJ

Series :

QFET®

Transistor Element Material :

SILICON

Length :

10.1mm

Factory Lead Time :

9 Weeks

Number of Terminations :

3

Published :

1999

Package / Case :

TO-220-3

Lead Pitch :

2.54mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Number of Pins :

3

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Element Configuration :

Single

Radiation Hardening :

No

Lead Free :

Lead Free

Resistance :

190mOhm

Threshold Voltage :

-4V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Turn On Delay Time :

17 ns

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Weight :

1.8g

Number of Channels :

1

Turn-Off Delay Time :

45 ns

Power Dissipation-Max :

100W Tc

Current - Continuous Drain (Id) @ 25°C :

16.5A Tc