FQP17P06

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-60V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Nominal Vgs :

-4 V

Height :

9.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Resistance :

120mOhm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Turn-Off Delay Time :

22 ns

Contact Plating :

Tin

Threshold Voltage :

-4V

Number of Elements :

1

Rise Time :

100ns

Turn On Delay Time :

13 ns

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rds On (Max) @ Id, Vgs :

120m Ω @ 8.5A, 10V

REACH SVHC :

No SVHC

Packaging :

Tube

Element Configuration :

Single

Power Dissipation-Max :

79W Tc

Vgs (Max) :

±25V

Number of Pins :

3

Fall Time (Typ) :

60 ns

Pulsed Drain Current-Max (IDM) :

68A

Dual Supply Voltage :

-60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Voltage - Rated DC :

-60V

FET Type :

P-Channel

Transistor Application :

SWITCHING

Series :

QFET®

Continuous Drain Current (ID) :

-17A

Mounting Type :

Through Hole

Length :

10.1mm

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Current Rating :

-17A

Width :

4.7mm

Package / Case :

TO-220-3

Factory Lead Time :

6 Weeks

Power Dissipation :

79W

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Published :

1999

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole