FQP17P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Mount :

Through Hole

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

25V

ECCN Code :

EAR99

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Rise Time :

100ns

Transistor Element Material :

SILICON

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

60V

Pulsed Drain Current-Max (IDM) :

68A

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Current Rating :

-17A

FET Type :

P-Channel

Continuous Drain Current (ID) :

-17A

Fall Time (Typ) :

60 ns

Width :

4.7mm

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-4V

Turn On Delay Time :

13 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

79W Tc

Package / Case :

TO-220-3

Nominal Vgs :

-4 V

Height :

9.4mm

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Element Configuration :

Single

Voltage - Rated DC :

-60V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Rds On (Max) @ Id, Vgs :

120m Ω @ 8.5A, 10V

Resistance :

120mOhm

Dual Supply Voltage :

-60V

Series :

QFET®

Vgs (Max) :

±25V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-60V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn-Off Delay Time :

22 ns

Length :

10.1mm

REACH SVHC :

No SVHC

Power Dissipation :

79W

Weight :

1.8g

Factory Lead Time :

6 Weeks

Published :

1999